Substrate structure with high reflectance and method for manufacturing the same

ABSTRACT

A substrate structure with high reflectance includes a base material, a patterned circuit layer, an insulating layer and a metal reflecting layer. The base material includes a first surface and a second surface opposite to the first surface. The patterned circuit layer is disposed on the first surface. The insulating layer covers the patterned circuit layer and a part of the first surface exposed by the patterned circuit layer. The metal reflecting layer covers the insulating layer, and a reflectance of the metal reflecting layer is substantially greater than or equal to 85%. A manufacturing method of a substrate structure with high reflectance is also provided.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of U.S. application Ser. No. 16/387,540, filed on Apr. 18, 2019,now allowed, which claims the priority benefits of U.S. provisionalapplication Ser. No. 62/784,769, filed on Dec. 25, 2018, and Taiwanapplication serial no. 108105862, filed on Feb. 21, 2019. The entiretyof each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of specification.

BACKGROUND Technical Field

The present disclosure generally relates to a substrate structure and amethod for manufacturing the same. More particularly, the presentdisclosure relates to a substrate structure with high reflectance and amethod for manufacturing the same.

Description of Related Art

With the development of technologies such as aerospace technology,electronic technology, and battery technology, in some specificsituations, the requirements for characteristics of polyimide film havebecome more diverse and refined. Nowadays, more advanced polyimide filmproducts have been developed, such as corona-resistant polyimide film,low dielectric polyimide film, and transparent polyimide film. In somespecific areas, such as the areas of flexible light bars with LEDs andbacklight modules of displays, the great improvement in reflectance ofpolyimide films is highly expected from the industries.

In order to increase the reflectance of the polyimide film, it is knownto additionally form a white film layer (for example, a white resinlayer) or a baking type ink, a photosensitive ink, or the like, on ageneral polyimide film to form a so-called dual-layered polyimide film.While this approach allows the polyimide film to present the desiredwhite color, the additional white film layer (coverlay) typically addsto the cost of fabrication, and current methods still fail to achievethe desired high reflectance.

SUMMARY

Accordingly, the present disclosure is directed to a substrate structurewith high reflectance and a method for manufacturing the same, which canachieve extremely high reflectance.

The present disclosure is directed to a substrate structure with highreflectance includes a base material, a first patterned circuit layer, asecond patterned circuit layer, a first insulation layer, and a metalreflection layer. The base material includes a first surface and asecond surface opposite to the first surface. The first patternedcircuit layer is disposed on the first surface. The second patternedcircuit layer is disposed on the second surface. The first insulationlayer covers the first patterned circuit layer and a portion of thefirst surface exposed by the first patterned circuit layer. A metalreflection layer covers the first insulation layer, wherein areflectance of the metal reflection layer is substantially greater thanor equal to 85%.

According to an embodiment of the present disclosure, the metalreflection layer comprises aluminum, silver, gold, copper, ruthenium,chromium, molybdenum, platinum, nickel, iron layers or any combinationthereof.

According to an embodiment of the present disclosure, the firstinsulation layer includes an ink layer, a polyimide layer, athermoplastic polyimide layer, a resin layer, a photo-imageable coverlay(PIC), a dry film solder resist (DFSR) or insulation adhesive layer.

According to an embodiment of the present disclosure, the substratestructure with high reflectance further includes an ink layer disposedbetween the first insulation layer and the metal reflection layer.

According to an embodiment of the present disclosure, the substratestructure with high reflectance further includes a protection layercovering the metal reflection layer.

According to an embodiment of the present disclosure, the protectionlayer is a transparent polymer protective layer having a heat resistanttemperature substantially greater than or equal to 200° C. and/or alight transmittance substantially greater than or equal to 80%.

According to an embodiment of the present disclosure, the protectionlayer includes a polyimide layer, a poly-phenylene sulfide (PPS) layeror a polyphenylene sulfone (PPSU) layer.

According to an embodiment of the present disclosure, the substratestructure with high reflectance further includes an adhesive layerdisposed between the first patterned circuit layer and the firstinsulation layer.

According to an embodiment of the present disclosure, the substratestructure with high reflectance further includes a conductive viasextending through the base material and electrically connected to thefirst patterned circuit layer and the second patterned circuit layer.

According to an embodiment of the present disclosure, the substratestructure with high reflectance further includes a second insulationlayer disposed on the second patterned circuit layer and a portion ofthe second surface exposed by the second patterned circuit layer.

According to an embodiment of the present disclosure, the substratestructure with high reflectance further includes a bonding layerdisposed between the first insulation layer and the metal reflectionlayer.

According to an embodiment of the present disclosure, the bonding layerincludes a thermoplastic polyimide layer or an adhesive layer.

The present disclosure provides a method for manufacturing a substratestructure with high reflectance including the following steps. A basematerial is provided. A first patterned circuit layer and a secondpatterned circuit layer are formed on a first surface and a secondsurface of the base material respectively. A first insulation layer anda metal reflection layer are provided on the first patterned circuitlayer and a portion of the first surface exposed by the first patternedcircuit layer, wherein the metal reflection layer covers the firstinsulation layer and a reflectance of the metal reflection layer issubstantially greater than or equal to 85%.

According to an embodiment of the present disclosure, the method offorming the metal reflection layer includes sputtering, evaporation,plating, electroplating, chemical displacement reaction or silver mirrorreaction.

According to an embodiment of the present disclosure, the manufacturingmethod of the substrate structure with high reflectance furtherincludes: forming a protection layer on the metal reflection layer.

According to an embodiment of the present disclosure, the manufacturingmethod of the substrate structure with high reflectance furtherincludes: forming an adhesive layer between the insulation layer and thefirst patterned circuit layer.

According to an embodiment of the present disclosure, the manufacturingmethod of the substrate structure with high reflectance furtherincludes: forming a second insulation layer on the second patternedcircuit layer and a portion of the second surface exposed by the secondpatterned circuit layer.

According to an embodiment of the present disclosure, the manufacturingmethod of the substrate structure with high reflectance furtherincludes: forming an ink layer on the first insulation layer before themetal reflection layer is formed.

According to an embodiment of the present disclosure, the method offorming the ink layer includes screen printing, jet printing, spraycoating or film overlay.

Based on the above, embodiments of the present disclosure provide asubstrate structure with high reflectance and a manufacturing methodthereof, the surface of the substrate structure is provided with a metalreflection layer with high reflectance, and the reflectance of the metalreflection layer is about 85% or more. Preferably, the reflectance ofthe metal reflection layer may be greater than or equal to 90%, therebyimproving the light reflection efficiency of the substrate structure. Insuch a configuration, when light-emitting elements such aslight-emitting diodes or micro-light-emitting diodes are disposed on thesubstrate structure to be used as an optical apparatus such as abacklight panel or a light bar, the optical apparatus can be effectivelyincreased in light extraction efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments of thedisclosure and, together with the description, serve to explain theprinciples of the disclosure.

FIG. 1 to FIG. 5 are schematic cross-sectional views showing amanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure.

FIG. 6 to FIG. 7 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure.

FIG. 8 to FIG. 9 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure.

FIG. 10 to FIG. 11 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure.

FIG. 12 to FIG. 14 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure.

FIG. 15 to FIG. 16 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure.

FIG. 17 is a schematic cross-sectional view of a substrate structurewith high reflectance in accordance with an embodiment of the presentdisclosure.

FIG. 18 is a schematic cross-sectional view of a substrate structurewith high reflectance in accordance with an embodiment of the presentdisclosure.

FIG. 19 is a schematic cross-sectional view of a substrate structurewith high reflectance in accordance with an embodiment of the presentdisclosure.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present preferredembodiments of the disclosure, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

The present disclosure will now be described more fully with referenceto the accompanying drawings, in which exemplary embodiments of thedisclosure are shown. The terms used herein such as “on”, “above”,“below”, “front”, “back”, “left” and “right” are for the purpose ofdescribing directions in the figures only and are not intended to belimiting of the disclosure. Moreover, in the following embodiments, thesame or similar reference numbers denote the same or like components.

FIG. 1 to FIG. 5 are schematic cross-sectional views showing amanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure. In the present embodiment,the manufacturing method of the substrate structure having highreflectance may include the following steps. Firstly, referring to FIG.1, a base material 112 is provided. In the present embodiment, the basematerial 112 may include a first surface S1 and a second surface S2opposite the first surface S1. In some embodiments, the first surface S1and the second surface S2 of the base material 112 may be covered by twometal foil layers 114, 116 to form a flexible copper clad laminate(FCCL) 110 as shown in FIG. 1. That is, the flexible copper cladlaminate 110 may include a base material 112 and two metal foil layers114, 116 covering the opposite surfaces of the base material 112respectively. For example, the material of the base material 112 mayinclude Polyimide (PI), thermoplastic polyimide (TPI) or the like, andthe metal foil layer 114, 116 may be, for example, a copper foil, whichmay be provided on the base material 112 by methods such as lamination,adhesive bonding or thermo-lamination, or the like. The embodiments ofthe present disclosure are not limited thereto. In other embodiments,the base material 112 and the metal foil layers 114, 116 may also adoptother suitable materials.

Next, referring to FIG. 2, in the present embodiment, a plurality ofvias 118′ as shown in FIG. 2 can be formed on the base material 112 (orflexible copper clad laminate 110). In this embodiment, the formingmethod of the vias 118′ may include forming a through hole on the basematerial 112 by, for example, a mechanical drilling process or a laserdrilling process to penetrate through the base material 112 forconnecting the first surface S1 and the second surface. In otherembodiments, the vias 118′ may also be a plurality of blind holes and/orburied holes connected to one another. The embodiment of the presentdisclosure does not limit the form of the vias 118′ as long as the vias118′ connecting the first surface S1 and the second surface S2.

Referring to FIG. 3, in the present embodiment, a conductive layer 120′may be formed on the base material 112 (or the copper foil substrate110) to cover the first surface S1 and the second surface S2 of the basematerial 112 in a comprehensive manner. Moreover, the conductive layer120′ may comprehensively (e.g., entirely) cover the inner wall of thevias 118′ to form a plurality of conductive vias 118, which areelectrically connected to the first surface S1 and the second surfaceS2. In the present embodiment, the method of forming the conductivelayer 120′ may include electroplating, but the embodiment of thedisclosure is not limited thereto.

Next, referring to FIG. 4, in the embodiment, a patterning process maybe performed on the conductive layer 120′ and the two metal foil layers114, 116 disposed on the base material 112 to form a patterned circuitlayer 120 at least partially covering the first surface S1 and thesecond surface S2 of the base material 112. That is to say, thepatterned circuit layer 120 may include the patterned conductive layerand the patterned metal foil layers. To be more specific, the patternedcircuit layer 120 may include a first patterned circuit layer 120 adisposed on the first surface S1 and a second patterned circuit layer120 b disposed on the second surface S2. In some embodiments, the firstpatterned circuit layer 120 a and the second patterned circuit layer 120b may expose portions of the surface of the base material 112 as shownin FIG. 4, respectively. In the present embodiment, the patterningprocess may include a lithography process or other suitable method. Theconductive vias 118 extend through the base material 112 and areelectrically connected to the first patterned circuit layer 120 a andthe second patterned circuit layer 120 b.

Referring to FIG. 5, in the present embodiment, a first insulation layer130 and a metal reflection layer 140 are provided on the first patternedcircuit layer 120 a and a portion of the first surface S1 exposed by thefirst patterned circuit layer 120 a. In the present embodiment, themetal reflection layer 140 covers the first insulation layer 130, and areflectance of the metal reflection layer 140 is substantially greaterthan or equal to 85%. Preferably, the reflectance of the metalreflection layer 140 of the present embodiment may be greater than orequal to 90%. In some embodiments, a second insulation layer 130 may beformed on the second patterned circuit layer 120 b and a portion of thesecond surface S2 exposed by the second patterned circuit layer 120 bwhile forming the first insulation layer 130. In the present embodiment,the first insulation layer 130 may be used to electrically insulate thefirst patterned circuit layer 120 a from the metal reflection layer 140.

In this embodiment, the insulation layer 130 may be a polyimide (PI)layer, a thermoplastic polyimide (TPI), a resin layer, a photo-imageablecoverlay (PIC), a dry film solder resist (DFSR) or other similarmaterial modified or improved based on the above materials. Theinsulation layer 130 may be applied to the first patterned circuit layer120 a, the second patterned circuit layer 120 b, and the portions of thefirst surface S1 and the second surface S2 exposed by the firstpatterned circuit layer 120 a and the second patterned circuit layer 120b by for example, the adhesive layer 150. In some embodiments, the firstinsulation layer 130 covering the first patterned circuit layer 120 aand the first surface S1 may be a polyimide layer mixed with dye (orink). That is to say, the first insulation layer 130 of the presentembodiment may be formed by using polyimide as a base and mixing withdyes of other color. For example, in some embodiments, the firstinsulation layer 130 may be a polyimide layer mixed with a white filler(dye), such that the first insulation layer 130 mixed with the whitefiller is substantially white in color, or is a light-colouredinsulation layer 130 of which the brightness is very close to white.Accordingly, the reflectance of the substrate structure 100 can befurther improved.

In the present embodiment, the metal reflection layer 140 may be formedon the first insulation layer 130 by, for example, sputtering,evaporation, electroless plating, electroplating, chemical displacementreaction, or silver mirror reaction, etc. For example, the metalreflection layer 140 can include aluminium, silver, gold, copper,tantalum, chromium, molybdenum, platinum, nickel, iron layers, or anycombination thereof, or other metal layers with high reflectance. Inthis embodiment, the reflectance of silver at a wavelength of 800 nm canbe as high as about 99.2%, and the reflectance at a wavelength of 500 nmmay also reach about 97.9%. Therefore, silver can be an optimal materialfor the metal reflection layer 140 at visible wavelengths andnear-infrared wavelengths. In addition, aluminium also has goodreflectance at wavelengths such as near-ultraviolet, visible, andnear-infrared light (aluminium has a reflectance of about 86.7% at awavelength of 800 nm and a reflectance of about 91.8% at a wavelength of500 nm). However, due to its soft and oxidative properties, the surfaceof the metal reflection layer 140 must be coated (plated) with aprotection layer when aluminium is adopted as material of the metalreflection layer 140. The metal reflection layer 140 may also be coated(plated) with a metal or non-metal film to increase its reflectance atcertain wavelengths. The reflectance of gold and copper at wavelengthsbetween 650 nm and 800 nm is also favourable (the reflectance of gold isabout 98.0% at a wavelength of 800 nm and is about 95.5% at a wavelengthof 650 nm; the reflectance of copper is about 98.1% at a wavelength of800 nm and is about 96.6% at a wavelength of 650 nm), but thereflectance of gold and copper at a wavelength of 500 nm is rather poor,so gold and copper can also be adopted as the material of the metalreflection layer 140 at wavelengths of 800 nm and 650 nm. Of course,this embodiment is for illustrative purposes only and is not intended tolimit the material of the metal reflection layer 140.

At this point, the manufacturing process of the substrate structure 100with high reflectance of the present embodiment is substantiallycompleted. Moreover, since the substrate structure 100 is provided witha metal reflection layer 140 with high reflectance, the light extractionefficiency thereof can be improved. In such a configuration, whenlight-emitting elements such as light-emitting diodes ormicro-light-emitting diodes are disposed on the substrate structure 100to be used as an optical apparatus such as a backlight panel or a lightbar, light extraction efficiency of the optical apparatus can beeffectively improved.

FIG. 6 to FIG. 7 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure. It should be noted thatthe substrate structure 100 a of the present embodiment is similar tothe substrate structure 100 of FIG. 5. Therefore, the same or similarreference numbers are adopted to denote the same or similar elements,and the description of the same or similar technical content may beomitted. For the description of the omitted part, reference may be madeto the foregoing embodiment, and the description is not repeated herein.Referring to FIG. 6 and FIG. 7, the main differences between thesubstance structure 100 a of the present embodiment and the substancestructure 100 of FIG. 5 will be described below.

Referring to FIG. 6 and FIG. 7, in the present embodiment, after thesubstrate structure shown in FIG. 4 is formed, the first and secondinsulation layers 130 a may be respectively formed on two oppositesurfaces of the substrate structure shown in FIG. 4. In this embodiment,the insulation layer 130 a may be a baking type ink layer, which may beformed on the two opposite surfaces of the structure shown in FIG. 4 by,for example, screen printing, jet printing, spray coating, or filmattaching (e.g., making the ink in a dry film form and then performingfilm attachment). Then, the insulation layer 130 a may be subjected to abaking process to evaporate the solvent contained in the ink to cure theinsulation layer 130 a. In other embodiments, the insulation layer 130 amay also be a liquid photo imageable (LPI) ink layer, which may beapplied to the two opposite surfaces of the structure shown in FIG. 4by, for example, screen printing, jet printing, spray coating, or filmattaching (e.g., making the ink in a dry film form and then performingfilm attachment). Then, the insulation layer 130 a may be subjected toan exposure and development process to cure the liquid photo imageableink layer or perform a patterning process on the liquid photo imageableink layer according actual requirements. In this embodiment, theabove-described baking type ink layer and liquid photo imageable inklayer can both be seen as a coverlay of the substitute structure. Insome embodiments, the first insulation layer 130 a disposed on the firstpatterned circuit layer 120 a and the base material 110 may be an inklayer mixed with dye. That is, the first insulation layer 130 a of thepresent embodiment may be a coloured ink layer, which may be formed byusing ink as a base and mixing with dyes of other color. For example,the first insulation layer 130 a may be an ink layer mixed with whitefiller (dye). Accordingly, the first insulation layer 130 a mixed withwhite filler is substantially white in color, or a light-colouredinsulation layer having a brightness close to white. Therefore, thereflectance of the substrate structure 100 a can be further improved. Inthe present embodiment, the reflectance of the first insulation layer130 a mixed with the white filler is substantially greater than thereflectance of the ink without being mixed with the white filler.Thereafter, a metal reflection layer 140 may be formed on the firstinsulation layer 130 a by, for example, sputtering, evaporation,electroless plating, electroplating, chemical displacement reaction, orsilver mirror reaction, etc., to form the substrate structure 100 a asshown in FIG. 7.

FIG. 8 to FIG. 9 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure. It should be noted thatthe substrate structure of the present embodiment is similar to thesubstrate structure 100 shown in FIG. 5. Therefore, the presentembodiment adopts the same or similar reference numbers and somedescription in the foregoing embodiments. The same or similar referencenumbers are adopted to denote the same or similar elements, and thedescription of the same or similar technical content may be omitted. Forthe description of the omitted part, reference may be made to theforegoing embodiment, and the description is not repeated herein.Furthermore, for the sake of clarity and simplicity, FIG. 8 and FIG. 9merely show the laminated structure provided on the structure shown inFIG. 4 (i.e., the structure shown in FIG. 4 is omitted in FIG. 8 andFIG. 9). Referring to FIG. 8 and FIG. 9, the main difference between thesubstrate structure of the present embodiment and the substratestructure 100 of FIG. 5 will be described below.

Referring to FIG. 4 and FIG. 8, in the embodiment, after the substratestructure shown in FIG. 4 is formed, the insulation layer 130 may beattached to the structure shown in FIG. 4 through an adhesive layer 150.In this embodiment, the insulation layer 130 may include a thermoplasticpolyimide (TPI), a resin layer or other similar materials modified orimproved based on the above materials. Moreover, the insulating layer130 may be attached to the first and second patterned circuit layers 120a, 120 b and a part of the first surface S1 and the second surface S2exposed by the first and second patterned circuit layers 120 a, 120 bthrough the adhesive layer 150. That is, the adhesive layer 150 isdisposed between the first patterned circuit layer (e.g., the firstpatterned circuit layer 120 a shown in FIG. 4) and the first insulationlayer 130, and may also be disposed between the second patterned circuitlayer (e.g., the second patterned circuit layer 120 b shown in FIG. 4)and the first insulation layer 130.

Next, referring to FIG. 9, the metal reflection layer 140 may be formedon the insulation layer 130 by, for example, sputtering, evaporation,electroless plating, electroplating, chemical displacement reaction, orsilver mirror reaction, etc., and then a protection layer 160 shown inFIG. 9 is formed on the metal reflection layer 140 to protect the metalreflection layer 140 from scratching or oxidizing. Moreover, theprotection layer 160 may include transparent polymer, which usually hashigh heat resistance (for example, the heat-resistant temperature issubstantially greater than or equal to about 200° C.), and the lighttransmittance is substantially greater than or equal to 80%. In thisembodiment, the protection layer 160 may be a polyimide layer, apoly-phenylene sulfide (PPS) layer, a polyphenylene sulfone (PPSU) layeror the like which may be modified or improved based on the abovematerials, but the embodiment of the disclosure is not limited thereto.One of ordinary skills in the art will appreciate that the protectionlayer 160 can be applied to the structures disclosed by any embodimentsof the present disclosure.

FIG. 10 to FIG. 11 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure. It should be noted thatthe substrate structure of the present embodiment is similar to thesubstrate structure 100 of FIG. 5. Therefore, the present embodimentadopts the same or similar reference numbers and some description in theforegoing embodiments. The same or similar reference numbers are adoptedto denote the same or similar elements, and the description of the sameor similar technical content may be omitted. For the description of theomitted part, reference may be made to the foregoing embodiment, and thedescription is not repeated herein. Furthermore, for the sake of clarityand simplicity of the drawings, FIG. 10 and FIG. 11 merely show thelaminated structure provided on the structure shown in FIG. 4 (that is,the structure shown in FIG. 4 is omitted in FIG. 10 and FIG. 11).Referring to FIG. 10 and FIG. 11, the main difference between thesubstrate structure of the present embodiment and the substratestructure 100 of FIG. 5 will be described below.

In this embodiment, the insulating layer 130 may be firstly provided asit is shown in FIG. 10, and then the metal reflection layer 140 may beformed on the insulation layer 130 by, for example, sputtering,evaporation, electroless plating, electroplating, chemical displacementreaction or silver mirror reaction, etc. In some embodiments, theprotective layer 160 may then be formed on the metal reflection layer140 to provide protection to the metal reflection layer 140. Thereafter,the structure shown in FIG. 10 is attached to the structure shown inFIG. 4 by using the adhesive layer 150. In other words, in theembodiment of the present disclosure, as it is shown in FIG. 8 and FIG.9, the laminated structure including the insulation layer 130, the metalreflection layer 140, and the protection layer 160 may be sequentiallyformed (or attached) on the structure shown in FIG. 4. Alternatively, asit is shown in FIG. 10 and FIG. 11, the laminated structure includingthe insulating layer 130, the metal reflection layer 140 and theprotection layer 160 may be firstly formed, and then the laminatedstructure may be attached to the structure shown in FIG. 4. Theembodiment of the present disclosure does not limit the manner andsequence for forming the laminated structure including the insulatinglayer 130 and the metal reflection layer 140.

FIG. 12 to FIG. 14 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure. It should be noted thatthe substrate structure of the present embodiment is similar to thesubstrate structure 100 of FIG. 5. Therefore, the present embodimentadopts the same or similar reference numbers and some description in theforegoing embodiments. The same or similar reference numbers are adoptedto denote the same or similar elements, and the description of the sameor similar technical content may be omitted. For the description of theomitted part, reference may be made to the foregoing embodiment, and thedescription is not repeated herein. Furthermore, for the sake of clarityand simplicity of the drawings, FIG. 12 to FIG. 14 merely show thelaminated structure provided on the structure shown in FIG. 4 (that is,the structure shown in FIG. 4 is omitted in FIG. 12 to FIG. 14).Referring to FIG. 12 to FIG. 14, the main difference between thesubstrate structure of the present embodiment and the substratestructure 100 of FIG. 5 will be described below.

Referring to FIG. 12, in the present embodiment, a nickel layer 142 maybe firstly formed on the first insulation layer 130 to firstly metallizethe first insulation layer 130. In the present embodiment, the method offorming the nickel layer 142 may include electroless plating or othersuitable method. Next, referring to FIG. 13, a metal reflection layer140 may be formed on the first insulation layer 130 by, for example,sputtering, evaporation, electroless plating, electroplating, chemicaldisplacement reaction, or silver mirror reaction, etc. As such, thenickel layer 142 is disposed between the first insulation layer 120 aand the metal reflection layer 140. In some embodiments, a protectionlayer 160 as shown in FIG. 14 can be formed over the metal reflectionlayer 140 to provide protection to the metal reflection layer 140.Thereafter, referring to FIG. 4 and FIG. 15, an adhesive layer 150 isformed between the first patterned circuit layer 120 a and theinsulation layer 130, such that the structure shown in FIG. 13 isattached to the structure shown in FIG. 4 by using the adhesive layer150. Of course, in other embodiments, the insulating layer 130 may befirstly attached to the structure shown in FIG. 4 by the adhesive layer150, and then the laminated structure including the nickel layer, themetal reflection layer 140 and the protection layer 160 is sequentiallyformed on the insulating layer 130 as it is shown in FIG. 12 to FIG. 14.The embodiment of the present disclosure does not limit the formingmanner and sequence of the laminated structure including the insulatinglayer 130, the nickel layer 142, and the metal reflection layer 140.

FIG. 15 to FIG. 16 are schematic cross-sectional views showing a partialmanufacturing process of a substrate structure with high reflectanceaccording to an embodiment of the disclosure. It should be noted thatthe substrate structure of the present embodiment is similar to thesubstrate structure 100 of FIG. 5. Therefore, the present embodimentadopts the same or similar reference numbers and some description in theforegoing embodiments. The same or similar reference numbers are adoptedto denote the same or similar elements, and the description of the sameor similar technical content may be omitted. For the description of theomitted part, reference may be made to the foregoing embodiment, and thedescription is not repeated herein. Furthermore, for the sake of clarityand simplicity of the drawings, FIG. 15 and FIG. 16 merely show thelaminated structure provided on the structure shown in FIG. 4 (that is,the structure shown in FIG. 4 is omitted in FIG. 15 and FIG. 16).Referring to FIG. 15 and FIG. 16, the main difference between thesubstrate structure of the present embodiment and the substratestructure 100 of FIG. 5 will be described below.

Referring to FIG. 15 and FIG. 16, in the embodiment, the protectionlayer 160 may be provided first, and then the metal reflection layer 140is formed on the (lower) surface of the protection layer 160 by, forexample, sputtering, evaporation, electroless plating, electroplating,chemical displacement reaction or silver mirror reaction, etc. In thepresent embodiment, the protection layer 160 may include transparentpolymer, which has a property of high heat resistance (for example, aheat-resistant temperature thereof being substantially higher than orequal to about 200° C.) and a light transmittance thereof issubstantially greater than or equal to 80%. In this embodiment, theprotection layer 160 may be a polyimide layer, a poly-phenylene sulfide(PPS) layer, a polyphenylene sulfone (PPSU) layer or the like which maybe modified or improved according to the above materials, but theembodiment of the disclosure is not limited thereto. Thereafter,referring to FIG. 16, the laminated structure shown in FIG. 15 isattached to the structure shown in FIG. 4 by using an insulationadhesive layer 130 b. That is, in the present embodiment, the insulationlayer 130 b for electrically insulating the first patterned circuitlayer 120 a from the metal reflection layer 140 is an insulatingadhesive to provide both insulation and adhesion functions.

FIG. 17 is a schematic cross-sectional view of a substrate structurewith high reflectance in accordance with an embodiment of the presentdisclosure. It should be noted that the substrate structure of thepresent embodiment is similar to the substrate structure 100 of FIG. 5.Therefore, the present embodiment adopts the same or similar referencenumbers and some description in the foregoing embodiments. The same orsimilar reference numbers are adopted to denote the same or similarelements, and the description of the same or similar technical contentmay be omitted. For the description of the omitted part, reference maybe made to the foregoing embodiment, and the description is not repeatedherein. Referring to FIG. 17, the main difference between the substratestructure 100 b of the present embodiment and the substance structure100 of FIG. 5 will be described below.

Referring to FIG. 17, it should be noted that, for the sake of clarityand simplicity of the drawings, the substrate structure 100 b of thepresent embodiment omits the patterns of the conductive vias 118 and thepatterned circuit layer 120 shown in FIG. 5, and also omits the metalfoil layers 114, 116, but one of ordinary skills in the art willappreciate that the substrate structure 100 b can also have suchcharacteristics described above. In the present embodiment, after thefirst insulation layer (e.g., polyimide layer) 130 is formed and beforethe metal reflection layer 140 is formed, an ink layer 170′ may beformed on the first insulation layer 130. That is, the ink layer 170′can be disposed between the first insulation layer 130 and the metalreflection layer 140.

Specifically, in the present embodiment, before the metal reflectionlayer 140 is formed, the ink layer 170′ may be formed on the firstinsulation layer 130 and the ink layer 170 may be formed on the secondinsulation layer 130. The so-called ink layer may be a baking type inklayer or a liquid photo imageable ink layer as described in theforegoing embodiments, and the manufacturing method and characteristicsthereof are not described herein. Then, the metal reflection layer 140is formed on the ink layer 170′. In the present embodiment, the methodof forming the ink layer 170′ and the ink layer 170 may include screenprinting, jet printing, spray coating, or film attaching, etc.

FIG. 18 is a schematic cross-sectional view of a substrate structurewith high reflectance in accordance with an embodiment of the presentdisclosure. It should be noted that the substrate structure 100 c of thepresent embodiment is similar to the substrate structure 100 of FIG. 5.Therefore, the present embodiment adopts the same or similar referencenumbers and some description in the foregoing embodiments. The same orsimilar reference numbers are adopted to denote the same or similarelements, and the description of the same or similar technical contentmay be omitted. For the description of the omitted part, reference maybe made to the foregoing embodiment, and the description is not repeatedherein. Referring to FIG. 18, the main difference between the substratestructure 100 c of the present embodiment and the substrate structure100 of FIG. 5 will be described below.

Referring to FIG. 18, in the present embodiment, the substrate structure100 c further includes a bonding layer 180, which is disposed betweenthe first insulation layer 130 and the metal reflection layer 140.Moreover, the bonding layer 180 may be a thermoplastic polyimide (TPI)layer or an adhesive layer. In this embodiment, the method ofmanufacturing the substrate structure 100 c further includes forming abonding layer 180 on the first insulation layer 130 before the metalreflection layer 140 is formed. Moreover, the method of forming thebonding layer 180 may include spray coating, spraying, dispensing orother suitable methods. Thereafter, the metal reflection layer 140 maybe formed on the bonding layer 180 by, for example, sputtering,evaporation, electroless plating, electroplating, chemical displacementreaction, or silver mirror reaction, etc. Then, the protective layer 160is formed on the metal reflection layer 140 to provide protection to themetal reflection layer 140, and prevent the metal reflection layer 140from scratched or oxidation. Furthermore, the protection layer 160 mayinclude a transparent polymer, which generally has a property of highheat resistance (for example, a heat-resistant temperature thereof beingsubstantially higher than or equal to about 200° C.) and a lighttransmittance thereof is substantially greater than or equal to 80%. Inthis embodiment, the protection layer 160 may be a polyimide layer, apoly-phenylene sulfide (PSS) layer, a polyphenylene sulfonate (PPSU)layer, or other similar materials modified or improved based on theabove materials, but the embodiments of the present disclosure are notlimited thereto.

FIG. 19 is a schematic cross-sectional view of a substrate structurewith high reflectance in accordance with an embodiment of the presentdisclosure. It should be noted that the substrate structure 100 d of thepresent embodiment is similar to the substrate structure 100 of FIG. 5.Therefore, the present embodiment adopts the same or similar referencenumbers and some description in the foregoing embodiments. The same orsimilar reference numbers are adopted to denote the same or similarelements, and the description of the same or similar technical contentmay be omitted. For the description of the omitted part, reference maybe made to the foregoing embodiment, and the description is not repeatedherein. Referring to FIG. 19, the main difference between the substratestructure 100 d of the present embodiment and the substrate structure100 c of FIG. 18 will be described below.

Referring to FIG. 19, in the present embodiment, the substrate structure100 d further includes a transparent adhesive layer 150′ disposedbetween the metal reflection layer 140 and the protection layer 160 toattach the protection layer 160 onto the metal reflection layer 140.Moreover, the transparent adhesive layer 150′ can be an optically clearadhesive (OCA) or other suitable transparent adhesive. In thisembodiment, the method of manufacturing the substrate structure 100 dfurther includes the following steps. Before the protection layer 160 isformed, the transparent adhesive layer 150′ is firstly formed(dispensed) on the metal reflection layer 140, and then the protectionlayer 160 is disposed on the transparent adhesive layer 150′.Accordingly, the protection layer 160 is fixed onto the metal reflectionlayer 140 to protect the metal reflection layer 140 from being scratchedor oxidized. In addition, the protection layer 160 may includetransparent polymer, which generally has a property of high heatresistance (for example, a heat-resistant temperature thereof beingsubstantially higher than or equal to about 200° C.) and a lighttransmittance thereof is substantially greater than or equal to 80%. Inthis embodiment, the protection layer 160 may be a polyimide layer, apoly-phenylene sulfide (PSS) layer, a polyphenylene sulfonate (PPSU)layer, or other similar materials modified or improved based on theabove materials, but the embodiments of the present disclosure are notlimited thereto. In this embodiment, the method of forming thetransparent adhesive layer 150′ may include spray coating, spraying,dispensing, or other suitable methods. In addition, in otherembodiments, the protection layer 160 may be a transparent adhesive suchas an optically clear adhesive, and is cured after being disposed on themetal reflection layer 140 to provide protection to the metal reflectionlayer 140. In such embodiment, the above-mentioned transparent adhesivelayer 150′ may be omitted.

In sum, the embodiment of the present disclosure provides a substratestructure with high reflectance and a manufacturing method thereof. Thesubstrate structure of the disclosure is provided with a metalreflection layer having a high reflectance, and the reflectance of themetal reflection layer is about 85% or more. Preferably, the reflectanceof the metal reflection layer of the disclosure may be greater than orequal to 90%, thereby improving the light reflection efficiency of thesubstrate structure. In such a configuration, when light-emittingelements such as light-emitting diodes or micro-light-emitting diodesare disposed on the substrate structure to be used as an opticalapparatus such as a backlight panel or a light bar, the opticalapparatus can be effectively increased in light extraction efficiency.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentdisclosure without departing from the scope or spirit of the disclosure.In view of the foregoing, it is intended that the present disclosurecover modifications and variations of this disclosure provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. A substrate structure with high reflectance,comprising: a base material comprising a first surface and a secondsurface opposite to the first surface; a first patterned circuit layerdisposed on the first surface; a second patterned circuit layer disposedon the second surface; a first insulation layer covering the firstpatterned circuit layer and a portion of the first surface exposed bythe first patterned circuit layer; a metal reflection layer covering thefirst insulation layer, wherein a reflectance of the metal reflectionlayer is substantially greater than or equal to 85%; and a first inklayer disposed between the first insulation layer and the metalreflection layer.
 2. The substrate structure with high reflectance asclaimed in claim 1, wherein a material of the metal reflection layercomprises aluminum, silver, gold, copper, ruthenium, chromium,molybdenum, platinum, nickel, iron layers or any combination thereof. 3.The substrate structure with high reflectance as claimed in claim 1,wherein the first insulation layer comprises an ink layer, a polyimidelayer, a thermoplastic polyimide layer, a resin layer, a photo-imageablecoverlay (PIC), a dry film solder resist (DFSR) layer or an insulationadhesive layer.
 4. The substrate structure with high reflectance asclaimed in claim 1, further comprising a conductive vias extendingthrough the base material and electrically connecting the firstpatterned circuit layer and the second patterned circuit layer.
 5. Thesubstrate structure with high reflectance as claimed in claim 1, whereinthere is no conductive material between the first patterned circuitlayer and the metal reflection layer.
 6. The substrate structure withhigh reflectance as claimed in claim 1, wherein the first ink layercomprises a baking type ink layer or a liquid photo imageable ink layer.7. The substrate structure with high reflectance as claimed in claim 1,wherein the first ink layer comprises a coloured ink layer.
 8. Thesubstrate structure with high reflectance as claimed in claim 1, furthercomprising a second insulation layer covering the second patternedcircuit layer.
 9. The substrate structure with high reflectance asclaimed in claim 8, further comprising a second ink layer covering thesecond insulation layer.
 10. The substrate structure with highreflectance as claimed in claim 9, wherein the second ink layercomprises a baking type ink layer or a liquid photo imageable ink layer.11. The substrate structure with high reflectance as claimed in claim 9,wherein the second ink layer comprises a coloured ink layer.
 12. Amethod for manufacturing a substrate structure with high reflectance,comprising: providing a base material; forming a first patterned circuitlayer and a second patterned circuit layer on a first surface and asecond surface of the base material; providing a first insulation layerand a metal reflection layer on the first patterned circuit layer and aportion of the first surface exposed by the first patterned circuitlayer, wherein the metal reflection layer covers the first insulationlayer, and a reflectance of the metal reflection layer is substantiallygreater than or equal to 85%; and forming a first ink layer on the firstinsulation layer before the metal reflection layer is formed.
 13. Themethod for manufacturing the substrate structure with high reflectanceas claimed in claim 12, wherein the method of forming the metalreflection layer comprises sputtering, evaporation, electroless plating,electroplating, chemical displacement reaction or silver mirrorreaction.
 14. The method for manufacturing the substrate structure withhigh reflectance as claimed in claim 12, wherein the method of formingthe first ink layer comprises screen printing, jet printing, spraycoating or film attaching.
 15. The method for manufacturing thesubstrate structure with high reflectance as claimed in claim 12,wherein there is no conductive material between the first patternedcircuit layer and the metal reflection layer.
 16. The method formanufacturing the substrate structure with high reflectance as claimedin claim 12, further comprising: forming a second insulation layer onthe second patterned circuit layer.
 17. The method for manufacturing thesubstrate structure with high reflectance as claimed in claim 16,further comprising: forming a second ink layer on the second insulationlayer.
 18. The method for manufacturing the substrate structure withhigh reflectance as claimed in claim 17, wherein the method of formingthe second ink layer comprises screen printing, jet printing, spraycoating or film attaching.